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Gate-Emitter Leakage Current :+/- 250 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :80 A
Pd - Power Dissipation :283 W
Collector- Emitter Voltage VCEO Max :650 V
Package / Case :TO-3P-3
Maximum Operating Temperature :+ 175 C
Maximum Gate Emitter Voltage :+/- 30 V
Configuration :Single
Collector-Emitter Saturation Voltage :1.6 V
Manufacturer :STMicroelectronics
Description :IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
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