IRG7PSH54K10DPBF
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Gate-Emitter Leakage Current :200 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :120 A
Pd - Power Dissipation :520 W
Collector- Emitter Voltage VCEO Max :1200 V
Package / Case :TO-247-3
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 30 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :2.4 V
Manufacturer :IR / Infineon
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The IRG7PSH54K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
