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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

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Description :IGBT MOD 1200V 139A 658W SOT227
Category :Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max) :139 A
Product Status :Active
Mounting Type :Chassis Mount
Package :Bulk
Series :HEXFRED®
Package / Case :SOT-227-4, miniBLOC
Vce(on) (Max) @ Vge, Ic :2.55V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max) :1200 V
Supplier Device Package :SOT-227
Mfr :Vishay General Semiconductor - Diodes Division
Operating Temperature :-40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max) :100 µA
IGBT Type :Trench
Power - Max :658 W
Input :Standard
Input Capacitance (Cies) @ Vce :4.4 nF @ 25 V
Configuration :Single
NTC Thermistor :No
Base Product Number :GT80
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

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